• | Sub-10 nm transistors, including those employing non-classical structures, novel channel and source/drain materials, or non-thermal injection mechanisms |
• | Junction and insulator materials and process technology for nanoelectronic devices |
• | Techniques for fabrication of nanostructures, including nanometer-scale patterning |
• | Physics of nanoelectronic devices, e.g. quantum effects, non-equilibrium transport |
• | Modeling/simulation of nanoelectronic devices, e.g. including atomistic effects |
• | Nanoscale surface, interface, and heterojunction effects in devices |
• | Device scaling issues including doping fluctuations and atomic granularity |
• | Circuit design issues and novel circuit architectures, including quantum computing, for nanoelectronic devices |
• | Optoelectronics using Silicon nanostructures |
• | Techniques targeting zero power electronics (self-supplying), including wireless sensors, energy harvesting, steep slope devices, ultra-low power design and devices |
• | Devices for heterogeneous integration on Silicon, including Graphene, III-V devices, CNT, spin-based devices, MEMs and NEMS, etc. |
• | Transistors based on two dimensional materials, e.g. MoS2, WS2, etc. |